High-resolution characterization of the forbidden Si 200 and Si 222 reflections

The basis-forbidden Si 200 and Si 222 reflections are investigated in detail as a function of the in-plane sample orientation Φ and the divergence perpendicular to the diffraction plane of the used diffractometer. The results have important consequences for the detection of layer peaks near these reflections.

• Publication year

  2015

• Venue

  Journal of Applied Crystallography

• Publication date

  2015-03-24

• Fields of study

  Chemistry, Materials Science, Physics, Medicine

• Identifiers
  DOI 10.1107/S1600576715004732PMID 25844081PMCID 4379439
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar, PubMed

• No claims are published for this paper.

• No concepts are published for this paper.

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