SCIENCE@home

Band gap formation and Anderson localization in disordered photonic materials with structural correlations

L. Froufe-Pérez,M. Engel,J. Sáenz,F. Scheffold

Published 2017 in Proceedings of the National Academy of Sciences of the United States of America

ABSTRACT

Significance It has been shown recently that disordered dielectrics can support a photonic band gap in the presence of structural correlations. This finding is surprising, because light transport in disordered media has long been exclusively associated with photon diffusion and Anderson localization. Currently, there exists no picture that may allow the classification of optical transport depending on the structural properties. Here, we make an important step toward solving this fundamental problem. Based on numerical simulations of transport statistics, we identify all relevant regimes in a 2D system composed of silicon rods: transparency, photon diffusion, classical Anderson localization, band gap, and a pseudogap tunneling regime. We summarize our findings in a transport phase diagram that organizes optical transport properties in disordered media. Disordered dielectric materials with structural correlations show unconventional optical behavior: They can be transparent to long-wavelength radiation, while at the same time have isotropic band gaps in another frequency range. This phenomenon raises fundamental questions concerning photon transport through disordered media. While optical transparency in these materials is robust against recurrent multiple scattering, little is known about other transport regimes like diffusive multiple scattering or Anderson localization. Here, we investigate band gaps, and we report Anderson localization in 2D disordered dielectric structures using numerical simulations of the density of states and optical transport statistics. The disordered structures are designed with different levels of positional correlation encoded by the degree of stealthiness χ. To establish a unified view, we propose a correlation-frequency (χ–ν) transport phase diagram. Our results show that, depending only on χ, a dielectric material can transition from localization behavior to a band gap crossing an intermediate regime dominated by tunneling between weakly coupled states.

PUBLICATION RECORD

CITATION MAP

EXTRACTION MAP

CLAIMS

  • No claims are published for this paper.

CONCEPTS

  • No concepts are published for this paper.

REFERENCES

Showing 1-48 of 48 references · Page 1 of 1

CITED BY

Showing 1-100 of 133 citing papers · Page 1 of 2

12
Next