The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures

No abstract is available for this paper.

• Publication year

  2001

• Venue

  Surface Science Reports

• Publication date

  2001-05-01

• Fields of study

  Materials Science, Chemistry

• Identifiers
  DOI 10.1016/S0167-5729(01)00011-5
• External record

  Open on Semantic Scholar

• Source metadata

  Semantic Scholar

• No claims are published for this paper.

• No concepts are published for this paper.

• Nucleation and growth kinetics in semiconductor chemical vapor deposition

  2001cited by this paper
• Equilibrium and nonequilibrium hydrogen coverages on vicinal Si(001) surfaces: Diffusion barriers and binding energies

  1999cited by this paper
• Dissociative adsorption of silane on the Si(100)-(2×1) surface

  1999cited by this paper
• Real-time scanning tunneling microscopy observation of Si(100)−(2 × 1)→(2 × n)→c(4 × 4) structural phase transitions

  1998cited by this paper
• Adsorption of disilane on Si(111)-(7 × 7) and initial stages of CVD growth

  1998cited by this paper
• Nucleation behaviour during silicon UHV-CVD on Si(111)7×7

  1998cited by this paper
• Rotation of a silicon dimer over the trench between dimer rows on the Si (001) surface

  1998cited by this paper
• Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon

  1998cited by this paper
• ROLE OF HYDROGEN IN SIH2 ADSORPTION ON SI(100)

  1998cited by this paper
• Two-dimensional island density in homoepitaxy on Si(111)7×7

  1998cited by this paper
• Dissociative adsorption and site specificity in the initial stages of tetraethoxysilane (TEOS) interaction with Si(111)-(7×7)

  1998cited by this paper
• GROWTH MODE IN SI(100)-(2 X 1) EPITAXY BY LOW-TEMPERATURE CHEMICAL-VAPOR DEPOSITION

  1998cited by this paper
• The Kinetics of the Low‐Pressure Chemical Vapor Deposition of Polycrystalline Silicon from Silane

  1998cited by this paper
• Effect of hydrogen on the growth kinetics of Si(0 0 1) during GSMBE from disilane

  1997cited by this paper
• Diffusion of adsorbed Si dimers on Si(001)

  1997cited by this paper
• A proposed structure of the nucleus for gas-source epitaxial growth of silicon

  1997cited by this paper
• Transition from Island Growth to Step-Flow Growth for Si/Si(100) Epitaxy

  1997cited by this paper
• New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy

  1997cited by this paper
• Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy

  1997cited by this paper
• Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy

  1997cited by this paper
• Room-temperature growth of submonolayers of silicon on Si(001) studied with scanning tunneling microscopy

  1997cited by this paper
• Diffusion of the Silicon Dimer on Si(001): New Possibilities at 450 K

  1997cited by this paper
• Nucleation along step edges during Si epitaxial growth on the Si(111) surface observed by STM

  1997cited by this paper
• Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy

  1997cited by this paper
• Gas-source growth of group IV semiconductors: II. Growth regimes and the effect of hydrogen

  1997cited by this paper
• Structures on Si(100) 2 × 1 at the Initial Stages of Homoepitaxy by SiH 4 Decomposition

  1997cited by this paper
• ANISOTROPIC KINETICS OF VACANCY DIFFUSION AND ANNIHILATION ON SI(001) SURFACES STUDIED BY SCANNING REFLECTION ELECTRON MICROSCOPY

  1997cited by this paper
• Silicon epitaxy on hydrogen-terminated Si(001) surfaces using thermal and energetic beams

  1997cited by this paper
• SiH4 chemical vapor deposition on Si(111)-(7×7) studied by scanning tunneling microscopy

  1997cited by this paper
• ROLE OF THE -SIH3 FUNCTIONAL GROUP IN SILANE ADSORPTION AND DISSOCIATION ON SI(100)

  1997cited by this paper
• Dissociative Adsorption of SiH2Cl2 on Si(111)7×7

  1997cited by this paper
• Ordering of vacancies on Si(001)

  1997cited by this paper
• Local arrangement of silylene groups on Si(100)2×1 afterSiH4sdecomposition

  1997cited by this paper
• Low temperature growth of SiO2 films on Si(100) using a hot molecular beam of tetraethoxysilane

  1997cited by this paper
• The chemisorption of H2C[Si(CH3)3]2 and Si6(CH3)12 on Si(100) surfaces

  1997cited by this paper
• Gas phase and surface reactions in subatmospheric chemical vapor deposition of tetraethylorthosilicate-ozone

  1997cited by this paper
• The Influence of Hydrogen on CVD‐Growth on Si(111) Surfaces

  1997cited by this paper
• KINETICS OF SI MONOMER TRAPPING AT STEPS AND ISLANDS ON SI(001)

  1997cited by this paper
• Dynamical STM Studies of the Growth of Silicon and Germanium on Silicon

  1997cited by this paper
• Mechanism for SiCl2 formation and desorption and the growth of pits in the etching of Si(100) with chlorine

  1997cited by this paper
• Surface reaction mechanisms on Si(111)-(7 × 7) during silane UHV-CVD

  1997cited by this paper
• Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms

  1997cited by this paper
• Tetramer formation on Si(100)-(2 × 1) during CVD growth from SiH4

  1997cited by this paper
• The adsorption of silane, disilane and trisilane on polycrystalline silicon : a transient kinetic study

  1996cited by this paper
• Modeling of silicon atomic-layer-epitaxy

  1996cited by this paper
• Dimer and String Formation during Low Temperature Silicon Deposition on Si(100).

  1996cited by this paper
• Direct measurement of surface diffusion using atom-tracking scanning tunneling microscopy.

  1996cited by this paper
• An ab initio study of SiH2 fragments on the Si(001) surface

  1996cited by this paper
• Dynamic observation of Si-island growth on a Si(111)-7 × 7 surface by high-temperature scanning tunneling microscopy

  1996cited by this paper
• Scanning tunneling microscopy of semiconductor surfaces

  1996cited by this paper
• Initial process of Si homoepitaxial growth on Si(001).

  1996cited by this paper
• A model for the temperature-dependent adsorption kinetics of SiH4 on Si(100)

  1996cited by this paper
• Dynamic changes in reflectance anisotropy from the Si(001) surface during gas-source molecular-beam epitaxy.

  1996cited by this paper
• H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE

  1996cited by this paper
• Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds.

  1996cited by this paper
• Nucleation behavior in molecular beam and chemical vapor deposition of silicon on Si(111)‐(7×7)

  1996cited by this paper
• TEOS‐based PECVD of silicon dioxide for VLSI applications

  1996cited by this paper
• Influence of SiH4 deposition on the Si(111) 1 x 1-->7 x 7 phase transition.

  1996cited by this paper
• Interactions between adsorbed Si dimers on Si(001).

  1996cited by this paper
• Growth Processes in Si/Si(111) Epitaxy Observed by Scanning Tunneling Microscopy during Epitaxy.

  1996cited by this paper
• Cold‐wall ultrahigh vacuum chemical vapor deposition of doped and undoped Si and Si1−xGex epitaxial films using SiH4 and Si2H6

  1996cited by this paper
• Simulations for structural properties and crystal growth on Si(001) surface

  1996cited by this paper
• Atomically-Resolved Studies of the Chemistry and Bonding at Silicon Surfaces.

  1996cited by this paper
• Flux jumping in thin films.

  1996cited by this paper
• Ostwald ripening of two-dimensional islands on Si(001).

  1996cited by this paper
• Interaction of vinyltrimethylsilane with the Si(111)‐(7×7) surface

  1996cited by this paper
• Direct tests of microscopic growth models using hot scanning tunneling microscopy movies.

  1996cited by this paper
• Characterization of self-limiting SiH2Cl2 chemisorption and photon-stimulated desorption as elementary steps for Si atomic-layer epitaxy.

  1996cited by this paper
• “In vivo” STM studies of the growth of Germanium and Silicon on Silicon

  1996cited by this paper
• Adsorption mechanisms of Si 2H 6 and GeH 4 on Si(100)2 1 surfaces

  1996cited by this paper
• STM study of low pressure adsorption of silane on Si(111) 7 × 7

  1996cited by this paper
• Surface Chemistry in the Chemical Vapor Deposition of Electronic Materials.

  1996cited by this paper
• Theory of Reactive Adsorption on Si(100)

  1996cited by this paper
• Nonlinear optical investigations of the dynamics of hydrogen interaction with silicon surfaces

  1996cited by this paper
• Scanning tunnelling microscopy of semiconductor surfaces

  1996cited by this paper
• Processing of semiconductors

  1996cited by this paper
• High temperature scanning tunneling microscopy during molecular beam epitaxy

  1996cited by this paper
• Kinetics of dissociative adsorption of dichlorosilane on Si(100)2 × 1

  1996cited by this paper
• Interaction of SiH4 with Si(100)2×1 and with Si(111)7×7 at 690 K: A comparative scanning tunneling microscopy study

  1996cited by this paper
• Scanning tunnelling microscopy study of Si(100)-c(4 × 4) structure formation by annealing of Si epitaxial films

  1996cited by this paper
• Energetics and dynamics of Si Ad-dimers on Si(001).

  1995cited by this paper
• Adsorption and decomposition of diethyldiethoxysilane on silicon surfaces: New possibilities for SiO2 deposition

  1995cited by this paper
• Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas

  1995cited by this paper
• Ab initio studies of the diffusion barriers at single-height Si(100) steps.

  1995cited by this paper
• Chemical potential maps and spatial correlations in 2D-island ripening on Si(001).

  1995cited by this paper
• Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy

  1995cited by this paper
• Si binding and nucleation on Si(100).

  1995cited by this paper
• Silicon oxide deposition in an electron cyclotron resonance plasma with microwave spectroscopic monitoring of SiO

  1995cited by this paper
• Adsorption and decomposition of trichlorosilane and trichlorogermane on porous silicon and Si(100)2×1 surfaces

  1995cited by this paper
• Determination of dynamic parameters controlling atomic scale etching of Si(100)-(2 x 1) by chlorine.

  1995cited by this paper
• Effect of reactant depletion on the microstructure and preferred orientation of polycrystalline SiC films by chemical vapor deposition

  1995cited by this paper
• Effect of PH3 on the dissociative chemisorption of SiH4 and Si2H6 on Si(100): Implications on the growth of in situ doped Si thin films

  1995cited by this paper
• Microcrystalline hydroxyapatite formation from alkaline solutions

  1995cited by this paper
• In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD

  1995cited by this paper
• Deposition of cubic SiC films on silicon using dimethylisopropylsilane

  1995cited by this paper
• Etching of Si(100)-2 x 1 with chlorine: Reaction pathways, energy anisotropies, and atomic-scale phenomena.

  1995cited by this paper
• Binding and diffusion of a Si adatom around type B steps on Si(001) c(4 × 2)

  1995cited by this paper
• Dissociation and pyrolysis of Si2H6 on Si surfaces: The influence of surface structure and adlayer composition

  1995cited by this paper
• Surface Chemistry of Silicon.

  1995cited by this paper
• Study of electron‐beam effects on trimethylsilane covered Si(100)

  1995cited by this paper

• Multiscale atomistic modelling of CVD: From gas-phase reactions to lattice defects

  2023cites this paper
• Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma

  2021cites this paper
• Electronic modification of wet-prepared Si surfaces by a dichlorosilane reaction at elevated temperature

  2021cites this paper
• Fiber optic hydrogen sensor based on a Fabry-Perot interferometer with a fiber Bragg grating and a nanofilm.

  2021cites this paper
• Present and new frontiers in materials research by ambient pressure x-ray photoelectron spectroscopy

  2020cites this paper
• Analysis of surface adsorption kinetics of SiH4 and Si2H6 for deposition of a hydrogenated silicon thin film using intermediate pressure SiH4 plasmas

  2019cites this paper
• Incorporation of Si during vapor phase epitaxy of III-V compounds: Evidence of an enthalpy-entropy compensation effect

  2018cites this paper
• Kinetic Monte Carlo simulation for semiconductor processing: A review

  2018cites this paper
• Quantum State-Resolved Studies of Chemisorption Reactions.

  2017cites this paper
• Lattice kinetic Monte Carlo simulation of epitaxial growth of silicon thin films in H 2 /SiH 4 chemical vapor deposition systems

  2017cites this paper
• Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate

  2015cites this paper
• Beyond the gap of pressure : XPS studies of interfaces at near ambient pressures

  2014cites this paper
• Dissociation of Ethoxysilane and Methoxysilane on Si(001)-2 × 1 and Si(111)-7 × 7 at Room Temperature: A Comparative Study Using Synchrotron Radiation Photoemission

  2014cites this paper
• Silicon Monomer Formation and Surface Patterning of Si(001)-2 × 1 Following Tetraethoxysilane Dissociative Adsorption at Room Temperature

  2014cites this paper
• Shape Classification for Micro and Nanostructures by Image Analysis

  2013cites this paper
• Retention and desorption behavior of tritium in Si related ceramics

  2013cites this paper
• Si(100)2×1 Epitaxy: A Kinetic Monte Carlo Simulation of the Surface Growth

  2013influential citation
• Communication: angle-resolved thermal dissociative sticking of CH4 on Pt(111): further indication that rotation is a spectator to the gas-surface reaction dynamics.

  2012cites this paper
• Revisiting the vibrational spectra of silicon hydrides on Si(100)-(2x1) surface: What is on the surface when disilane dissociates?

  2010cites this paper
• Si(100)表面での水素解離の活性障壁と脱離エネルギー：バリアパズルはどこまでわかったか

  2010cites this paper
• Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures

  2010cites this paper
• Disilane chemisorption on Si(x)Ge(1-x)(100)-(2 x 1): molecular mechanisms and implications for film growth rates.

  2009cites this paper
• Molecular mechanisms for disilane chemisorption on Si(100)-(2 x 1).

  2009cites this paper
• Preparation and Stability of Silyl Adlayers on 2×1-Reconstructed and Modified Si(100) Surfaces

  2009cites this paper
• Fractal approach to the CO oxidation on silica porous materials

  2008cites this paper
• Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane

  2008cites this paper
• Chapter 16 Growth and Etching of Semiconductors

  2008cites this paper
• Vibrational activation in direct and precursor-mediated chemisorption of SiH(4) on Si(100).

  2008cites this paper
• Energetics and Rate Constants of Si2H6 and Ge2H6 Dissociative Adsorption on Dimers of SiGe(100)-2 × 1

  2007cites this paper
• The dissociative adsorption of silane and disilane on Si(100)-(2 x 1).

  2007cites this paper
• Quantitative estimate of H abstraction by thermal SiH3 on hydrogenated Si(001)(2×1)

  2007cites this paper
• Interaction of SiHx precursors with hydrogen-covered Si surfaces: Impact dynamics and adsorption sites

  2007cites this paper
• Early morphological changes on Si(111) surfaces during UHV processing

  2007cites this paper
• Chemical manipulation of multifunctional hydrocarbons on silicon surfaces

  2007cites this paper
• Light emission from ion-bombarded Ge(100) surfaces under continuous germane and silane exposures

  2006cites this paper
• Dissociative adsorption of molecular hydrogen on silicon surfaces

  2006cites this paper
• Growth of Au-catalysed Si nanowires by low pressure chemical vapour deposition on Si(100) and amorphous Si surfaces

  2006cites this paper
• Low Dimensional Si/SiGe Structures Deposited by UHV-CVD for Thermophotovoltaics

  2006cites this paper
• Organic chemistry on solid surfaces

  2006cites this paper
• Silicon Surface Exfoliation under Compression Plasma Flow Action

  2006cites this paper
• DFT study on dissociative adsorption of SiH4 and GeH4 on SiGe(1 0 0)-2 × 1 surface

  2006cites this paper
• Surface energy, stress and structure of well-relaxed amorphous silicon: A combination approach of ab initio and classical molecular dynamics

  2005cites this paper
• The influence of filament material on radical production in hot wire chemical vapor deposition of a-Si:H

  2005cites this paper
• Microcanonical unimolecular rate theory at surfaces. III. Thermal dissociative chemisorption of methane on Pt(111) and detailed balance.

  2005cites this paper
• Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputtering

  2005cites this paper
• Ion-bombardment induced light emission from Si(1 0 0) surfaces under continuous germane exposures

  2005cites this paper
• Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon

  2004cites this paper
• Ion-bombardment induced light emission from Si(100) surfaces under continuous silane exposures

  2004cites this paper
• Development of a molecular dynamics potential for Si–H systems and its application to CVD reaction processes

  2004cites this paper
• Evaluation of different models for the dissociation of silane on the Si(111)7×7 surface using the extended Brenner empirical potential

  2003cites this paper
• Mechanism of GeH4 dissociation on Si(111)-(7×7)

  2003cites this paper
• Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

  2003cites this paper
• Density functional theory study of the Si2H6−xFx series of molecules☆

  2003cites this paper
• Surface Reaction Probabilities of Silicon Hydride Radicals in SiH4/H2 Thermal Chemical Vapor Deposition

  2002cites this paper
• Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

  2002cites this paper
• Electronic Properties of Disilane: An ab initio Calculation

  2002cites this paper